Publication: Simulation of dielectric material on the electrical performance of organic thin film transistor for low voltage device application
| datacite.subject.fos | oecd::Engineering and technology::Electrical engineering, Electronic engineering, Information engineering::Electrical and electronic engineering | |
| dc.contributor.author | Too, Jun Zheng | |
| dc.date.accessioned | 2025-05-09T03:22:34Z | |
| dc.date.available | 2025-05-09T03:22:34Z | |
| dc.date.issued | 2023-07 | |
| dc.description.abstract | Key features and benefits of the Organic Thin Film Transistor (OTFT) include their high flexibility, low processing cost attributes, lightweight nature, and the fact that they can be constructed to be transparent. The demand for high performing OTFT has increased significantly, and the study of gate dielectrics with a higher dielectric constant than the conventional silicon dioxide dielectric has become important to increase gate capacitance. However, up until this day, it has been challenging to precisely determine how the dielectric constant of a dielectric material affects the performance of OTFT. Thus, the purpose of the project is to study the impact of dielectric material on the electrical performance of OTFT for low voltage device applications using the 2-D Atlas simulator from Silvaco. P-type pentacene-based OTFT with Bottom-gate Bottom-contact (BGBC) configuration has been modelled to study the effects of the dielectric materials, which are Silicon Dioxide (SiO2) and Poly(vinyl alcohol) (PVA) on the OTFT performance. The use of the software can help to realize the finite element type simulation of OTFTs and the electrical parameters of the OTFT model, which are threshold voltage, subthreshold swing, drain current ratio, transconductance, and mobility have been extracted with the aid of the software. | |
| dc.identifier.uri | https://erepo.usm.my/handle/123456789/21586 | |
| dc.language.iso | en | |
| dc.title | Simulation of dielectric material on the electrical performance of organic thin film transistor for low voltage device application | |
| dc.type | Resource Types::text::report::technical report | |
| dspace.entity.type | Publication | |
| oairecerif.author.affiliation | Universiti Sains Malaysia |