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Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range

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dc.contributor.authorAhmed Ali, Amal Mohamed
dc.date.accessioned2023-08-15T02:34:44Z
dc.date.available2023-08-15T02:34:44Z
dc.date.issued2022-02
dc.description.abstractReal time dosimetry is a major challenge in medical, industrial and education fields. One promising candidate for dosimetry is the metal oxide semiconductor fieldeffect transistor (MOSFET) dosimeter. A new design of the MOSFET dosimeter is being developed in a different study to measure the dose delivered to the tissue layers. This thesis will discuss the development of a new type of radiation detector based on the characteristics of different metal oxide materials, and a new model of radiation detector, known as extended gate field-effect transistor (EGFET) and the optimization of the operating conditions.
dc.identifier.urihttps://erepo.usm.my/handle/123456789/17269
dc.subjectExtended Gate Field Effect Transistor
dc.subjectRay In Diagnostic Energy Range
dc.titleZno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range
dc.typeResource Types::text::thesis::doctoral thesis
dspace.entity.typePublication
oairecerif.author.affiliationUniversiti Sains Malaysia
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