Publication: Thermal-structural coupling on the effect of cu-cu hybrid bonding in the 3d stacked die configuration
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Date
2024-07-05
Authors
Goh, Zheng Lin
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Abstract
Advanced packaging technologies such as EMIB (Embedded Multi-Die Interconnect Bridge) and Foveros, developed by Intel have revolutionized semiconductor integration by enabling compact, high-performance devices through 3D stacked die configurations. This study focuses on the warpage effects in 3D stacked die configurations using copper-copper (Cu-Cu) hybrid bonding under thermal cyclic conditions that are critical for ensuring semiconductor device reliability. The integration of Cu-Cu direct advanced packaging technology introduces challenges in heat dissipation and structural integrity. This research analyses Cu-Cu direct advanced packaging using Ansys simulations through Thermal-Structural Coupling to explore temperature distribution, thermal strain, and Von-mises stress across different Cu-Cu hybrid bonding heights. Findings indicate uniform heat transfer across thermal cycles with significant stress concentrations observed at corner bonding interfaces. Reducing Cu-Cu hybrid bonding height from 0.025mm to 0.017mm mitigates thermal strain and stress, with the 0.017mm height proving optimal for minimizing warpage effects. This research contributes insights crucial for enhancing semiconductor packaging reliability and addressing industry demands for energy-efficient and compact electronic devices. It underscores the role of thermal cyclic research in advancing Cu-Cu direct advanced packaging technology, supporting industry standards, cost-efficiency, and innovation in semiconductor engineering.