Publication: Fabrication And Characterization Of Tio₂/Cu/Tio₂ Multilayer Thin Films For Thermoluminescence Dosimetry Using Rf/Dc Sputtering
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Date
2025-09
Authors
Alkadem, Idriss Ali Saleh
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Abstract
Thermoluminescent dosimeters (tlds) are widely used devices made from phosphors, ceramics, and crystals, known for their high luminescence output per absorbed dose. However, they face significant challenges, including rapid signal fading, radiation scattering, saturation at high doses, and complex annealing processes for reuse. This study aims to develop a novel tio₂/cu/tio₂ multilayer thin film dosimeter that addresses these limitations, improving the performance and reliability of radiation measurement. The multilayer dosimeters were fabricated using radio-frequency (rf) and direct current (dc) sputtering methods, enabling faster deposition rates while ensuring high purity and uniformity. Three batches of multilayer films were produced for analysis. The first batch included a single layer of pure tio₂ with thicknesses of 20, 30, 50, 100, and 150 nm. The second batch was structured as tio₂ (150 nm)/cu (25 nm)/tio₂ (x nm), with x values of 20, 30, 50, 100, and 150 nm. The third batch consisted of tio₂ (150 nm)/cu (x nm)/tio₂ (50 nm), with x values of 5, 10, 25, 40, and 50 nm. We analyzed the structural, morphological, and optical properties of the films using various techniques, including xrd, uv-vis, fesem, edx, afm, spectroscopy, and pl spectroscopy. The multilayer films demonstrated favorable responses to x-ray and gamma-ray exposure, tested up to 1500 mgy. The sensitivity measurements revealed that the films were approximately 2.25 times less sensitive than tld-100 for x-rays and about 9.8 times less sensitive for gamma rays.
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Fabrication Characterization Tio₂/Cu/Tio₂ Multilayer Films Thermoluminescence