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Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application

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dc.contributor.authorArvind Singh Rawat
dc.date.accessioned2024-05-02T08:26:54Z
dc.date.available2024-05-02T08:26:54Z
dc.date.issued2023-05
dc.description.abstractIn the wide development of the Internet of Things (IoT), Machine-to-Machine (M2M), and biomedical applications in research and standardization, the spectrum of sub-GHz has received fresh attention. Long-range (LoRa) devices use the sub-GHz frequency bands to operate. The size of the chip becomes bigger when designed to target low frequencies and it is mainly contributed by the inductors. In this research, a high-performance CMOS power amplifier (PA) with a novel custom shape, high Qfactor compact inductor (HQCI) is fabricated in 130 nm, 6-metal layers CMOS process.
dc.identifier.urihttps://erepo.usm.my/handle/123456789/19079
dc.subjectMultiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor
dc.subjectLora Application
dc.titleMultiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application
dc.typeResource Types::text::thesis::doctoral thesis
dspace.entity.typePublication
oairecerif.author.affiliationUniversiti Sains Malaysia
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