Publication: Fabrication And Characterization Of Hybrid Colloidal Silicon Carbide Quantum Dots On Nanostructured Silicon For Photovoltaic Application
Loading...
Date
2025-02
Authors
Olajide, Olaoye Abdulmutolib
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
Silicon carbide (sic) is one of the most promising semiconductor materials for optoelectronics owing to its superior properties such as high resistance to chemical, electrical and optical degradation. Semiconductor nanoparticles smaller than 10 nm have shown size-dependent physical and chemical properties. Sic nanoparticles in the size range of 1-6 nm are in the centre of interest in wide-ranging areas such as optoelectronics, photovoltaics, quantum optics, bioimaging, and medical diagnostics, owing to its enhanced luminescent properties. In photovoltaic application, the use of colloidal 3c-sic quantum dots (qds) has not been fully realized as a down-convertor, to recover the absorbed photon loss due to thermalization loss. In this work, the synthesized colloidal 3c-sic qds exhibit particle size in the quantum confinement size range and enhanced photoluminescence and absorbance with large stokes shifts of ~277 nm (4.48 ev), which is due to the decrease in particle size smaller than the exciton bohr diameter (4 nm) of bulk 3c-sic. The large stokes shift is an indicative of good down-converting material. The broadband absorption of crystalline silicon (c- si) is improved via the metal-assisted chemical etching technique which decreases the broadband reflection of the c-si. To investigate the photoconductive effect of the qds, hybrid colloidal 3c-sic/b-si with enhanced photoconductivity is synthesized for different concentrations of qds (9, 12 and 15 mg/ml).
Description
Keywords
Quantum dots