Publication: Fabrication And Characterization Of Passivated Perovskite Solar Cell With Zinc Oxide Quantum Dots As Electron Transport Layer
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Date
2025-02
Authors
Mohammed, Ahlaam Taher Nomaan Saeed
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Abstract
This work is dedicated to fabricate low-temperature processed n-i-p lead halide perovskite solar cells using zno quantum dot (qd)-based film as electron transport layer (etl). The work is divided into three main parts as follows: the first part reports the growth of low temperature zno qd-based film and lead halide perovskite (ch3nh3pbi3) film as an efficient etl and photo-active layer, respectively. The zno qd-etl was prepared from solution-based zno qds having average particle size of 4.4 nm using solvothermal route, then spin coated over ito substrate at different thicknesses and treated at different temperatures. 60 nm-thick zno film dried at 100 oc showed better quality in terms of surface coverage, qd-preserved nature with average grain size of 5.13 nm, and outstanding photoelectric property due to its high surface-to-volume ratio, thus it was selected as low temperature etl. Separately, ch3nh3pbi3 perovskite films were grown at different temperatures using dimethylformamide (dmf) solvent and treated with different anti-solvents. The analysis showed that chlorobenzene (cb)-treated perovskite film grown at 100 oc revealed void-free surface morphology with good crystallinity and optical properties, thus it was chosen as an efficient visible light-absorber in the fabricated pscs. In the second part, cb-treated ch3nh3pbi3 film annealed at 100 oc was integrated over 60 nm-thick zno qd-etl for fabricating pscs without and with inserting al2o3 passivating layer (⁓10 nm) into zno qd-etl/ ch3nh3pbi3 interface.
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Perovskite solar cells