Porous GaN For Photodetector Applications

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dc.contributor.authorMahmood, Ainorkhilah
dc.date.accessioned2018-01-11T01:45:18Z
dc.date.available2018-01-11T01:45:18Z
dc.date.issued2017-08
dc.description.abstractIn this study, the structural, optical and electrical properties of gallium nitride nanostructures are developed for photonic applications. Visible and ultraviolet (UV) photodetectors are fabricated based on optimized porous GaN nanostructures. In the first category of this work, the porous GaN samples are prepared using Pt assisted UV electroless etching. The optimized sample (with 60 minutes etching duration) shows high porosity (59.88%), the highest surface roughness (244 nm) and the most intense photoluminescence (PL) peak. In the second category, porous GaN are prepared using direct current photoelectrochemical etching (DCPEC) with two types of contact; front contact and both front and backside contact. The DCPEC with front contact is optimized by applying voltage of 15 V for 15 min etching duration to obtain the highest PL intensity hence enhanced the surface roughness. Porous GaN with high porosity, uniform hexagonal nanoporous structure and the most intense PL peak is prepared using DCPEC with both front and backside contact (with J=20 mA/cm2). In the third category of this work, unintentionally doped (UID) porous GaN and Si-doped porous GaN are prepared using a novel technique alternating current photoelectrochemical etching (ACPEC). The high porosity and uniformly porous GaN samples are prepared through optimization of etching current density. The optimized UID porous GaN (with J = 50 mA/cm2, 45 min etching duration) shows the highest PL intensity and hence improves uniformity as well as surface roughness. Photodetectors are subsequently fabricated by depositing Pt Schotkky contact onto all optimized porous samples. The optimized ACPEC resulted in gallium nitride nanostructures with high porosity and uniformity which exhibited the best response towards visible and UV illumination.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/5359
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectGallium nitride nanostructuresen_US
dc.subjectare developed for photonic applicationsen_US
dc.titlePorous GaN For Photodetector Applicationsen_US
dc.typeThesisen_US
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