Simulation, Fabrication And Electrical Characterization Of Silicon Bipolar Transistor And Design Of Sige Heterojunction Bipolar Transistor

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dc.contributor.authorAbdul Rahim, Alhan Farhanan
dc.date.accessioned2016-10-06T02:20:56Z
dc.date.available2016-10-06T02:20:56Z
dc.date.issued2002-10
dc.description.abstractBipolar transistors are well known for its high current driving capability and current gains, while CMOS transistors are dominant in the integrated circuit market because of its low power consumption and small size advantage. The combination of both types of transistor on the same chip provides a high performance circuit with a high packing density. In this work O.5-fJ.m BiCMOS technology is fully utilized to realize silicon bipolar transistors with optimized performance. Process and device simulation of SIL V ACO software packages are used to simulate the silicon bipolar transistor utilizing the BiCMOS technology. The result of the simulation is compared with the measured result from NTT's data to validate the simulator. The fabrication of silicon bipolar transistor utilizing the existing O.5-fJ.m BiCMOS technology has been performed. Electrical characterization of the Si BJT particularly in the form of Gummel plot is perfonned. Devices with different emitter drive-in temperature are investigated. The results showed that significant improvements in device performance can be achieved by optimising the emitter drive-in temperature. In particular it has been demonstrated that an emitter drive-in at 970°C, lmin. by Rapid Thermal Annealing (RTA) compared to 930°C, 3mins. by Furnace Annealing (FA) improves the electrical characteristics of the transistor. The parameters extracted demonstrate that it is possible to obtain high performance silicon bipolar transistors in a O.5-l-lm based BiCMOS technology. A process has been developed to fabricate silicon bipolar transistor utilizing bipolar technology from the existing BiCMOS technology. A number of emitter drive;-: in temperatures, emitter dopants as well as the use of polysilicon and amorphous silicon emitter are set to investigate the performance of the Si BJT. A brief simulation of polysilicon emitter bipolar transistor is performed to explain chara~teristics of the transistors. The electrical results of the Si BJT show that the use of a-Si emitters produces transistors with lower base current compared to devices with poly-Si emitters f and hence larger gain. It is also shown that phosphorus implanted devices produces very high and non-ideal collector and base currents. Better electrical characteristics are obtained for arsenic implanted devices. Again the results demonstraJe that significant improvements in device performance can be achieved by optimising the emitter drivein temperature. Si BJT performance can be improved by incorporating Ge in the base. In this work, design and preliminary simulation of high speed Silicon Germanium (SiGe) heterojunction bipolar transistor are performed to investigate the device performance. A set of Ge percentages. are arranged to investigate its effect on the collector and base currents of the devices. The incorporation of Ge in the conventional Si BJT has been shown to improve their performances. It is observed that Ge% is responsible for the collector current enhancement but the base current remains the same as that for Si BJT, and hence the gain increased.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/2679
dc.subjectElectrical Characterizationen_US
dc.subjectOf Silicon Bipolar Transistoren_US
dc.titleSimulation, Fabrication And Electrical Characterization Of Silicon Bipolar Transistor And Design Of Sige Heterojunction Bipolar Transistoren_US
dc.typeThesisen_US
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