Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films

Simple item page
dc.contributor.authorGanie, Umar Bashir
dc.date.accessioned2019-05-02T07:19:22Z
dc.date.available2019-05-02T07:19:22Z
dc.date.issued2018-04
dc.description.abstractInN is the least studied material among III-V nitrides, due to the challenges associated with its low dissociation temperature and lack of suitable substrate. The discovery of a narrow band gap (0.7 eV) renewed the interest of researchers to carry out the detailed study of InN for optoelectronic applications. The commonly used growth techniques include molecular beam epitaxy and metalorganic chemical vapor deposition. Radio frequency (RF) sputtering is also commonly used for the growth of thin films and nanostructures, but it usually produces polycrystalline films with high carrier concentration and low electron mobility. However, the benefit of using RF sputtering are its low cost, easy to handle and produces InN films even at room temperature which is not possible with other mentioned techniques. This study will be using RF magnetron sputtering for the growth of InN thin films and study their structural, electrical, and optical properties. The commonly used substrates for InN growth are Si, Al2O3, GaN and SiC with a lattice mismatch of 8%, 25%, 11% and 15% respectively. This study uses bulk GaN, quartz, Al2O3, and Si (111) substrates for InN growth. InN, ZnO, and Cu-ZnO buffer layers were also used to see the overall effect on the growth InN including lattice mismatch. The structural characterization was carried out using X-ray diffraction (XRD) spectroscopy, surface morphology was studied using field emission scanning electron microscopy and atomic force microscopy. Raman spectroscopy was used to study both structural and optical properties. Optical bandgaps of InN films were obtained using ultraviolet-visible reflectance spectroscopy. Electrical properties were studied using Hall effect measurements. With the application of buffer layers, highly c-textured InN films were obtained on all the substrates with some small peaks in some cases. XRD and Raman analysis confirmed that InN films are hexagonal wurtzite in nature.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/8137
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectStructural, electrical, and optical propertiesen_US
dc.subjectof indium nitride thin filmsen_US
dc.titleStructural, Electrical, And Optical Properties Of Indium Nitride Thin Filmsen_US
dc.typeThesisen_US
Files
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Pusat Pengajian Sains Fizik - Tesis