Proses punaran kering dengan cecair meruap karbon tetraklorida
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Date
2006-06
Authors
Low, Ah Chuan
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Abstract
In this project, a new plasma etching method using liquid source which is much
cheaper and safer is used. Etch rate study had been carried out on aluminium thin
films that are coated on microscopic glass slides. Argon gas acts as carrier to carry
carbon tetrachloride vapour that generate the reactive chlorine ions into the plasma
chamber (pressure 1 torr) to etch the aluminium layer. Result shows that like plasma
etching using gas source, the profile and etch rate is very dependant on the
concentration of the generated reactive species and radio frequency
forwardlreflected(minimum) power. In this project, it is found that etch rate increases
when the radio frequency forward power is increased while keeping the reflected
power at the minimum(5W). It is also found that the thicker aluminium thin film gives a
much higher etch rate when all the other parameters and processing factors remain
the same. Beside this, with the same radio frequency power and same gas flow, the
etch rate also increases until as though to a constant value at a particular thickness for
different thin film width. This happened when the reactive ion generation becomes
saturated. Uneven etching on the thin film surface is found with the help od inspection
microscope. Overall, this study shows that etch rate using liquid vapourised source is
very much lower when compare to using gaseous source. Anyway, this low etch rate
may becomes very useful when the microelectronic device fabrication advance to the
nano scale dimension.
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Keywords
Plasma etching