Study Of Gan Low Dimensional Structures On Silicon Substrates Grown By Thermal Vapor Deposition For Photodiode And Solar Cell Applications
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Date
2014-02
Authors
Abdalla Abdelrahman, Kamaleldin Mohamed
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Sains Malaysia
Abstract
Gallium nitride (GaN) is a greatly promising wide band gap semiconductor
with applications in high power electronic and optoelectronic devices.
Heterostructure solar cell involving GaN low Dimensional (low D) structures on
single crystalline silicon (Si) substrates are the preferable choice as they have
excellent internal quantum efficiencies, large open-circuit voltages, and low
processing cost. This thesis examines the growth of GaN low D structures on Si
substrates using inexpensive thermal vapor deposition (TVD) techniques for solar
cell and photodiode (PD) devices. The growth was achieved using two methods. The
first method involved the growth of GaN low D structures on n-Si (111) in NH3-free
environments by TVD via thermal evaporation of GaN powder under different
carrier gases, substrate temperatures and deposition times. The result showed that the
morphology and shape of GaN low D structures are highly dependent on each
parameter. The X-ray diffraction and Raman spectra of the low D structures
indicated that the GaN structure had a hexagonal wurtzite structure. The TVD is
optimized by using 1h deposition time and 1000ᵒC temperature to obtain uniform
dense low D structures with good crystalline quality and hence enhanced
performance of PD and solar cell devices.
Description
Keywords
Silicon Substrates , Solar Cell Applications