GeSn film deposited by rf magnetron sputtering for photodetector applications.

dc.contributor.authorSarmast, Hadi Mahmodi Sheikh
dc.date.accessioned2018-08-08T00:57:13Z
dc.date.available2018-08-08T00:57:13Z
dc.date.issued2017-07
dc.description.abstractDi dalam tesis ini, filem aloi semikonduktor Ge1-xSnx telah disediakan melalui sistem percikan magnetron RF dalam usaha menumbuhkan filem pada suhu rendah untuk mengelakan pengasingan Sn pada permukaan. Sifat struktur, optik dan elektrik lapisan tersebut di atas substrat Si disiasat untuk aplikasi optoelektronik. In this thesis, the Ge1-xSnx semiconductor alloy films have been prepared through RF magnetron sputtering to grow the film at low temperature to suppress the Sn surface segregation. The structural, optical, electrical properties of the grown Ge1-xSnx alloy films on silicon (Si) substrate were investigated for optoelectronic applications.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/6234
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectOptoelectronicen_US
dc.subjectFilmen_US
dc.titleGeSn film deposited by rf magnetron sputtering for photodetector applications.en_US
dc.typeThesisen_US
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