Studying The Fabrication Of Thin Film Silicon Solar Cell On Polymeric And Glass Substrate

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dc.contributor.authorAng, Pun Chong
dc.date.accessioned2016-12-06T07:33:25Z
dc.date.available2016-12-06T07:33:25Z
dc.date.issued2016-05
dc.description.abstractSi thin film solar cell on PET substrate was fabricated by depositing Aluminum (Al) thin film (440 nm) as back contact, Al-Si alloy thin film (1 μm) as absorber layer, Sb-Si allloy thin film (120 nm) as emitter and Silver (Ag) front contact. The final conversion efficiency of the Si thin film solar cell on PET is around 0.105 %. The low efficiency of this device was believed to be cause by the amorphous nature of absorber and emitter layer. In order to solve this issue, fabrication of crystalline Si thin film by Aluminum Induced Crystallization (AIC) technique and SF6/Ar plasma etch methods were implemented. AIC technique needed to anneal the sample at least to 400 °C, therefore PET which melts at around 250 °C is not suitable. PET substrate was replaced by glass and PI. The structure of Si thin film solar cell for both glass and PI substrate are tungsten (W) thin film (500 nm) as back contact, Al doped Si thin film (180 nm by AIC) as seed layer and back surface field (BSF), epitaxial thickening intrinsic Si (i-Si) as absorber, gallium (Ga) doped zinc oxide (ZnO) thin film as emitter and Ag front contact. Crystallize Si thin film by AIC technique (with naturally Al doped of concentration about 1019 atoms/cm3) was successfully fabricated on both glass and PI substrate. Raman results shows that the sample are crystalline nature with Raman peaks (Glass: 520 cm-1, PI: 518 cm-1) close to Raman peak for c-Si (521 cm-1). XRD spectra shows they are in Si (111) crystalline phase. Epitaxial thickening of this seed layer to create a crystallize i-Si absorber layer is successfully done. However the crystalline quality of i-Si layer is slightly worst compare to seed layer. Sputtered Ga doped ZnO thin film also shown a crystalline nature with ZnO (002) crystalline phase with doping concentration of around 1020 atoms/cm3, which is suitable for emitter layer. The final conversion efficiency of Si thin film solar cell on glass and PI increased to 1.034 % and 0.924 %.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/3250
dc.subjectSi thin film solar cell on PET substrate was fabricateden_US
dc.subjectby depositing Aluminum as back contact,en_US
dc.titleStudying The Fabrication Of Thin Film Silicon Solar Cell On Polymeric And Glass Substrateen_US
dc.typeThesisen_US
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