Thermal And Optical Performance Of Ingaalp-Based Low- And Gan-Based High-Power Light-Emitting Diode Packages

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dc.contributor.authorAbdullah Raypah, Muna Ezzi
dc.date.accessioned2022-11-11T02:27:12Z
dc.date.available2022-11-11T02:27:12Z
dc.date.issued2020-02
dc.description.abstractThis study was divided into three main parts. In the first part, the performance of indium gallium aluminum phosphide (InGaAlP) low-power (LP) SMD LED affixed to substrates with different configurations. In the second part, the heat-dissipation factor, optical power, luminous flux, and spectral flux of LP LEDs were estimated by extending the application of the equations that were employed for high-power (HP) LEDs. In the third part, the performance of thin film gallium nitride (ThinGaN) HP LED attached to a SinkPAD via solder was evaluated.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/16626
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectThermal And Optical Performanceen_US
dc.subjectIngaalp-Based Low- And Gan-Based High-Power Light-Emitting Diode Packagesen_US
dc.titleThermal And Optical Performance Of Ingaalp-Based Low- And Gan-Based High-Power Light-Emitting Diode Packagesen_US
dc.typeThesisen_US
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