Aloe-polysaccharides thin film as all-natural and flexible resistive random access memory
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Date
2018-06
Authors
Yeap, Kee Leong
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Abstract
Electronic-waste (e-waste) is an issue that can pose a threat to the environment and
human health. This is because e-waste is not easily to decompose within short term period
and it often contains toxic materials such as lead, mercury, beryllium and polyvinyl
chloride. Hence, an idea of using Aloe-polysaccharides thin film based resistive random
access memory (RAM) is suggested in this research work. In this research, Acemannan
powder was used to form Aloe-polysaccharides thin film by mixing with deionized water.
Acemannan is the major component in the parenchyma cell of Aloe vera. It is the
polysaccharide formed through the linking of mannose (C6H12O6) by β-(1, 4)-glycosidic
bonds. Then, the effect of Acemannan powder in the range of 1 mg, 3 mg, 5 mg, 7 mg and
the effect of different drying temperatures (40oC, 80oC, 120oC and 140oC) on the memoryswitching characteristics of Aloe-polysaccharide thin film based memory device was
studied. There was several characterization techniques used to examine the characteristics
of Acemannan thin film in term of its chemical, and structural properties. While, Aloepolysaccharides thin film based memory device was fabricated by mixing Acemannan
powder with deionized water to form precursor solution, then spin-coating the solution on
top of the Indium tin oxide (ITO)-coated glass substrate with 1000 rpm for 30 seconds.
After that, spin-coated sample was dried in oven for 1 hour to form Aloe-polysaccharides
thin film. Finally, aluminium was thermally coated on top of the Aloe-polysaccharides thin
film using thermal evaporator and characterized using Semicoductor Parameter Analyzer
under 1-12 V for forward and reverse bias. Based on the results, 3 mg and 5 mg Acemannan powders showed the most significant change of current density (∆J) at 3 V, 5 V and 9 V for 80oC and 120oC respectively. For 3 mg Acemannan powder, ∆J at 3 V, 5 V and9 V for forward and reverse bias were 2.040 x 10-4
J, 1.860 x 10-4J, 1.727 x 10-4J and 2.361 x 10-4 J, 2.059 x 10-4
J, 2.011 x 10-4
J. While, the ∆J in 5 mg Acemannan powder at 3
V, 5 V and 9 V for forward and reverse bias were 1.850 x 10-4 J, 2.171 x 10-4 J, 2.216 x 10-4
J and 2.011 x 10-4 J, 2.348 x 10-4J, 2.406 x 10-4J. This is because 3 mg and 5 mg of
Acemannan powder is the suitable amounts to form more trap centers at 80oC and 120oC in
the interstitial space of Acemannan thin film which allow the injection electrons to move
from top electrode (Al) to bottom electrode (ITO) or vice versa for completing the circuit.
Hence, a significant current density can be obtained and set the memory device into ONstate. A suitable sweep voltage of 3V, 5V and 9V is also needed for the electrons to come
across and able to be trapped in the trap centers of Acemannan thin film.