Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application

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dc.contributor.authorAfzal, Naveed
dc.date.accessioned2019-08-05T02:04:09Z
dc.date.available2019-08-05T02:04:09Z
dc.date.issued2017-02
dc.description.abstractIn this work, growth of indium aluminum nitride (InAlN) film was studied on different substrates by using reactive magnetron co-sputtering technique. The study was mainly focused to grow In-rich InAlN film on p-type Si (111) substrate with improved physical properties. The structural properties of InAlN were investigated through X-ray diffraction (XRD) analysis, surface properties were studied through field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) whereas the electrical properties were examined by taking Hall measurements and current-voltage (I-V) characteristics of the films. The band gap of InAlN was estimated through UV-Vis reflectance spectroscopy. The work was divided into three major parts. In the first part, growth and properties of magnetron sputtered InAlN films were comprehensively studied on Si (111) substrates by changing the film composition, substrate temperature, film thickness and gas flow ratio. The InAlN film was deposited on p-type Si (111) substrates by using reactive magnetron co-sputtering of pure In and Al targets in Ar-N2 atmosphere under different deposition conditions. The XRD results indicated that by increasing In mole fraction x in InxAl1-xN from 0.25 to 0.86, its structural quality is improved. The electrical resistivity and band gap of the film were decreased with increase of the x value. The growth of In-rich InAlN film was also studied at different substrate temperatures ranging from room temperature to 300 oC. The structural analysis revealed an increase in the intensity of c-axis oriented InAlN diffraction peak with increase of the substrate temperature. The surface characterization depicted an increase of grain size and surface roughness whereas the electrical studies showed a decrease in electrical resistivity of the film with increase of the substrate temperature.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/8566
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectCharacterizations of magnetron co-sputtered InAIN filmsen_US
dc.subjectfor photodetectors applicationen_US
dc.titleFabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Applicationen_US
dc.typeThesisen_US
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