Preparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys.

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dc.contributor.authorHassan, Zainuriah
dc.date.accessioned2017-10-16T04:50:49Z
dc.date.available2017-10-16T04:50:49Z
dc.date.issued2016
dc.description.abstractNanostructured porous binary, ternary and quaternary Ill-nitrides (lnGaN and lnAIGaN) have been successfully fabricated using low cost ultraviolet (UV)-assisted photo-electrochemical (PEC) etching routes. Direct current (DC) has been employed to provide additional driving force to accelerate the PEC etching process, in which an improvement in optical characteristics of the semiconductors with regards to photoluminescence intensity and a stress relaxation in optical phonon modes has been attained through the formation of nanostructures/pores on the semiconductor surface.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/4937
dc.subjectNanostructureden_US
dc.subjectultravioleten_US
dc.subjectsemiconductoren_US
dc.titlePreparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys.en_US
dc.typeTechnical Reporten_US
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Institut Penyelidikan dan Teknologi Nano Optoelektronik (INOR) - Geran Penyelidikan