Tin Sulphide Nanostructures Synthesized By Chemical Bath Deposition For Near-Infra-Red Photodetector Applications

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dc.contributor.authorMahdi, Mohamed Saleh
dc.date.accessioned2021-01-19T02:21:42Z
dc.date.available2021-01-19T02:21:42Z
dc.date.issued2017-12
dc.description.abstractThis study aims to optimize the growth parameters for synthesizing nanostructured tin sulphide (SnS) thin films for efficient photodetector devices. A good crystal quality and low dark current are significant prerequisites in obtaining a high photodetector device performance. In addition, low temperature growth of thin film allows the use of polyethylene terephthalate (PET) material as a substrate. The growth of thin films was achieved using chemical bath deposition technique (CBD).en_US
dc.identifier.urihttp://hdl.handle.net/123456789/10899
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectTin Sulphide Nanostructures Synthesizeden_US
dc.subjectChemical Bath Depositionen_US
dc.subjectNear-Infra-Red Photodetectoren_US
dc.titleTin Sulphide Nanostructures Synthesized By Chemical Bath Deposition For Near-Infra-Red Photodetector Applicationsen_US
dc.typeThesisen_US
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