Nanostructured Porous Si And Gan Fabricated By Electrochemical And Laser Induced Etching Techniques
| dc.contributor.author | Abd-Alghafour, Asmiet Ramizy | |
| dc.date.accessioned | 2019-08-28T08:31:35Z | |
| dc.date.available | 2019-08-28T08:31:35Z | |
| dc.date.issued | 2011-08 | |
| dc.description.abstract | Porous Si (PS) and Porous GaN (PGaN) nanostructures have been produced by electrochemical and laser-induced etching techniques, respectively. Radiofrequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow the GaN sample while a commercial silicon wafer was used. The etching mechanism and the parameters that produce the different nanostructures are discussed. The control of the size and the shape of present nanostructures were investigated by modifying several etching parameters: current density, laser power density, etching time, and electrolyte solution. The surface morphologies of PS and PGaN verify that pore diameter and nanostructure are dependent on the etching parameters, and that the shifting towards shorter wavelength is due to the diminishing quantum confinement dimension of the sample skeletons where blue shift of wavelength increases along with porosity. Two methods have been used for porosity measurement namely, conventional method (weighing method) and image processing (IP) method. A more accurate method based on IP function analysis was developed to determine the porosity percentage of the samples. According to the quantum confinement luminescence model, the shorter peak wavelength of luminescence has caused the increase in the energy band gap (Eg) of the porous structure. A novel technique using integrated electrochemical and laser-induced etching to produce Si nanowires with high consistency in its final shape and resultant nanostructures is presented here. Solar cells based on electrochemically etched PS surfaces were fabricated, and the effect of the porosity of the silicon surface on the cell efficiency was investigated. | en_US |
| dc.identifier.uri | http://hdl.handle.net/123456789/8716 | |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Sains Malaysia | en_US |
| dc.subject | Nanostructured Porous | en_US |
| dc.subject | Laser Induced Etching Techniques | en_US |
| dc.title | Nanostructured Porous Si And Gan Fabricated By Electrochemical And Laser Induced Etching Techniques | en_US |
| dc.type | Thesis | en_US |
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