Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
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Date
2019-11
Authors
Siti Nur Atikah Shamsuddin
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Sains Malaysia
Abstract
This study focuses on the growth and characterization of gallium nitride
(GaN) nanostructures deposited on n-type PSi (100) substrate using electrochemical
deposition (ECD) and radio frequency (RF) sputtering techniques. In the first step of
this work, PSi substrates were obtained using direct current (DC) and pulsed current
(PC) electrochemical etching techniques. The result showed that PC etching technique
produced higher porosity and more uniform PSi substrate compared to than DC
etching technique. In the second step, GaN layer was grown on PSi substrate by ECD
technique. The quality of GaN was improved by nitridation process. Several peaks of
hexagonal wurtzite (h-GaN) were observed at 32.4⁰, 34.6⁰, and 36.8⁰ which
corresponding to the (010), (002), and (101) orientations, respectively
Description
Keywords
Electrochemical And Radio Frequency , Nanostructures On Porous Silicon