Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition

Simple item page
dc.contributor.authorLeow, Mun Tyng
dc.date.accessioned2018-07-17T01:13:18Z
dc.date.available2018-07-17T01:13:18Z
dc.date.issued2012
dc.description.abstractPhysical vapor deposition (PVD) method is widely used in semiconductor industry in metallic film deposition process. It has been found that the metallic film properties are influenced by the parameter change in the PVD sputtering machine. Ionized physical vapor deposition (I-PVD) came about when electronic devices shrink in sizes which increase the packing density of the device. This lead to higher aspect ratio of the via size and smaller interconnect lines of the integrated circuit. I-PVD sputtering method had successfully relieved the step coverage issues for high aspect ratio trenches and vias. In semiconductor industries, reliability surfaced as the major enemy. In this study, metallic film sputtered by direct current (DC) magnetron sputtering system is studied and characterized. Two types of long throw DC magnetron sputtering system were used, which are the conventional (Hi Fill®) and advanced (Advanced Hi Fill®) system. For conventional DC magnetron sputtering, only the substrate biasing is varied while for the advanced technique, the parameter of substrate biasing and magnetic coil current is varied for deposition of Ti metallic film. Film stack of AlCu/TiN/Ti are deposited to investigate the influence of bottom Ti towards the subsequent films. The potential parameter for I-PVD were implemented in patterned wafer process for metal 1 and the result showed a successful increase in resistance of electromigration (EM) when wafers were tested for wafer-level EM test. The structural, surface morphological and physical properties of the films were investigated using X-ray diffraction (XRD), atomic force microscope (AFM), scanning electron microscope (SEM), transmission electron microscope (TEM), Eichhorn & Haussmann film stress metrology tool, acoustic measurement machine and four-point probe. In this research, the implementation of the process parameter used in characterizing the sputtering of Ti film by using Advanced Hi Fill® system together with substrate biasing has proven its ability to increase of EM lifetime in semiconductor industry.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/5937
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectMetallic film sputtered by direct currenten_US
dc.subjectmagnetron sputtering systemen_US
dc.titleCharacterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Depositionen_US
dc.typeThesisen_US
Files
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Pusat Pengajian Sains Fizik - Tesis