Fabrication Of Two Dimensional Silicon Photonic Crystal
| dc.contributor.author | Sin, Yew Keong | |
| dc.date.accessioned | 2018-06-08T02:43:13Z | |
| dc.date.available | 2018-06-08T02:43:13Z | |
| dc.date.issued | 2010-03 | |
| dc.description.abstract | Photonic crystals are materials with a periodicity in refractive index. When electromagnetic waves with a wide range of frequencies propagate through these materials, certain range of frequencies is prohibited. The prohibited frequencies are known as photonic bandgap. In this study, a two dimensional silicon photonic crystal is fabricated by microfabrication method. Electron beam lithography and etching process are important processes in this method. Hence, preliminary works on optimization parameters in electron beam lithography are necessary. The relations between parameters like beam voltage, beam current, beam dosage and packing factor are studied to ensure lithography process works properly. Subsequently, various types of etching process are applied to create two dimensional photonic crystals structure into a silicon wafer. Scanning electron microscope is the monitoring tool for the whole process by running surface characterization on each fabricated structure. Photonic bandgap is calculated by MIT Photonic-bands package software and the structural color effect of photonic crystal is observed with a simple setup. From the result of preliminary works, the relations of parameters are higher beam dosage is required when higher beam current and higher beam voltage are applied, or a low packing factor structure is exposed during electron beam lithography. With 30kV as electron beam voltage and 75pA as electron beam current, electron beam dosage for exposing the structure with 0.65 as packing factor was 177μC/cm2. Overexposure occurred when electron beam dosage higher than this value was applied for this combination of parameters. During fabrication, reactive ion etching is the appropriate tools for etching. Finally, a two dimensional photonic crystal structure is successfully fabricated on an n-type silicon wafer with (100)- orientation. The calculated photonic bandgap of this photonic crystal is in the range 2.08-2.73μm. | en_US |
| dc.identifier.uri | http://hdl.handle.net/123456789/5712 | |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Sains Malaysia | en_US |
| dc.subject | Photonic crystals are materials | en_US |
| dc.subject | with a periodicity in refractive index | en_US |
| dc.title | Fabrication Of Two Dimensional Silicon Photonic Crystal | en_US |
| dc.type | Thesis | en_US |
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