Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells.

Simple item page
dc.contributor.authorDevarajan, Mutharasu
dc.date.accessioned2017-09-06T06:49:55Z
dc.date.available2017-09-06T06:49:55Z
dc.date.issued2013
dc.description.abstractGaN and Ga-rich InGaN have been considered as the most important and indispensable materials used for the fabrication of efficient thin film solar cells which are active in entire visible and part of the near UV spectral regions. Initially, Al doped Ga203 thin film was synthesized using staking method and doping occurs at >400°C. Non-stoichiometry Al doped Ga203 thin film was observed by post annealing.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/4483
dc.subjectTransitionen_US
dc.subjectMetalen_US
dc.subjectmodulateden_US
dc.subjectstructuresen_US
dc.titleStudies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells.en_US
dc.typeTechnical Reporten_US
Files
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Pusat Pengajian Sains Fizik - Geran Penyelidikan