Simulation Of Performance On Multiquantum- Well Violet Ingan Laser Diode And Analysis Of Its Output For Digital Modulation

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Date
2010-09
Authors
Abdullah, Rafid A.
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Universiti Sains Malaysia
Abstract
This simulation and theoretical study is divided into two parts. Part one focuses on the performance of multi-quantum-well (MQW) violet InGaN laser diode (LD); whereas, part two focuses on the analysis of the output of this laser for the purpose of digital modulation. Two programs have been utilized. They are ISE TCAD (Integrated System Engineering Technology Computer Aided Design) simulator and MATLAB program. The researcher has coupled ISE TCAD simulator with MATLAB program as a new method for the purpose of simulation of digital modulation of the LD. The main objectives of this study are to obtain a low threshold current and kink-free light output power-current (L-I) curve of the MQW violet InGaN LD with an emission wavelength near 405 nm, and to analyse the output of the LD for the purpose of digital modulation. The performance of the MQW violet InGaN LD has been achieved through optimization of its active region, blocking layer (BL) and cavity length. The MQW violet InGaN LD with double quantum well (QW) has been used as a base structure. The effects of QW thickness, barrier thickness and type on the electrical and optical properties and built-in polarization have been investigated. The kink-free L-I curve with the lowest threshold (16.42 mA) and highest output power (64.2 mW) has been obtained with QW and barrier thicknesses of 2.5 and 5 nm, respectively. The built-in polarization has been proven to depend on the QW thickness and barrier thickness and type. The influence of the quaternary AlInGaN BL on LD properties has been extensively investigated.
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Simulation Of Performance On Multiquantum- Well Violet Ingan Laser Diode And Analysis , of Its Output For Digital Modulation
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