Structural And Optical Properties Of Alxinyga1-X-Yn Thin Films
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Date
2012-02
Authors
Abed, Muslim A.
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Abstract
The studies focus on the investigations of the structural and optical properties
of three sets of nitride thin films. The first set is InxGa1-xN (0.2 ≤ x ≤ 0.8) ternary
nitride, the other two sets are AlxInyGa1-x-yN quaternary nitrides, the first one with
constant Al, x = 0.06, and In in the range of 0 ≤ y ≤ 0.10, while the second set is with
constant In, y = 0.10, and variable Al composition ranging from 0 ≤ x ≤ 0.20. As well
as the study of the zone-center optical phonon modes, especially the A1(LO), E1(TO),
E2(Low) and E2(High) modes for ternary and quaternary nitride materials
theoretically using pseudo unit cell (PUC) model and experimentally using Raman
and FTIR spectroscopy.
The ternary and quaternary films were grown on c-plane (0001) sapphire
substrates with AlN as buffer layers using plasma assisted molecular beam epitaxy
(PA-MBE) technique. The structural and optical properties of the ternary and
quaternary nitride semiconductors have been investigated by several non-contact and
non-destructive equipments, which include structural characterizations such as
scanning electron microscopy (SEM), energy dispersive X-ray (EDX), atomic force
microscopy (AFM) and high resolution X-ray diffraction (HR-XRD), while the
optical characterizations include, spectral reflectance technique, ultraviolet-visible
(UV-VIS) spectroscopy, photoluminescence (PL) spectroscopy, Raman spectroscopy
and polarized infrared (IR) reflectance spectroscopy.
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Keywords
Thin films