The effect of implant angle and resist shadowing in submicron implant technology

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dc.contributor.authorLee, Kang Hai
dc.date.accessioned2014-11-04T02:53:19Z
dc.date.available2014-11-04T02:53:19Z
dc.date.issued2006
dc.descriptionMasteren_US
dc.description.abstractAs the integrated circuit (IC) fabrication industry gears up to volume manufacturing of 90nm technology node and beyond, there are issues still need to be addressed at the lower technology nodes such as 0.13μm and 0.22μm. The lateral scaling has faces limitation in dealing with the profiles encroachment due to resist shadowing for well implant process. Driving the ion implant angle to near normal regime is a potential solution for the above concern. Nevertheless, this approach will lead to severe dopant channeling. Thus, there is an interest to study the impact of implant angle and resist shadowing on sub-micron technology. The goal for this work was to determine the feasibility of a novel approach to forming a well with near 0 tilt implantation. To achieve this, there is a requirement to find a compromise between dopant channeling and resist shadowing for the high-energy implantation in low tilt angle regime. This study will focus on low tilt angle high-energy implantation since this implant regime has more severe issues on the resist shadowing and dopant channeling. All implant processes in the experiments were performed by spin disk endstation GSD batch implanter system. There are two experiments to evaluate the impact of implant angle. The first experiment is to evaluate the uniformity of the dopant profile across the wafer (implant uniformity) with the intention to find the optimum implant tilt angle with acceptable implant uniformity. In this work, all sample wafers have been prepared by performing single and quad implantations with implant angle 0 to 7. The characterization of implant uniformity has been done by thermal wave measurement on the sample. For low tilt high-energy implantation, the implant uniformity is dominated by the implant beam angle error. In terms of the dopant profile uniformity across the wafer, tilt 2 or higher tilt angle implant has been proposed for single implant process. Meanwhile, quad 4 and quad 5 have been proposed for quad implant. The second experiment in this work involves fabrication of the novel well structures with tilt 2 implant to create channeled well doping profile. The device performance is compared with the conventional well structures with dechanneled doping profiles, which were fabricated by quad 5 implant. Based on the analysis on the transistor electrical data, a novel implant angle scheme with improved cycle time has been proposed. The proposed scheme improves the N+ to Nwell isolation performance without deteriorating Id/Ioff and Vtlin/Id characteristics of MOSFET. This can be achieved by performing high tilt quad 5 at the deep well region and low tilt 2- degree implant at the field oxide region. The work indicates the potential of implementing the well with channeled profiles for the improvement of isolation performance with further optimization of the dose and energy.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/356
dc.language.isoenen_US
dc.subjectMathematical scienceen_US
dc.subjectImplant angleen_US
dc.subjectSubmicronen_US
dc.titleThe effect of implant angle and resist shadowing in submicron implant technologyen_US
dc.typeThesisen_US
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