A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.

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dc.contributor.authorY, C.Lee
dc.date.accessioned2017-09-14T04:28:39Z
dc.date.available2017-09-14T04:28:39Z
dc.date.issued2000
dc.description.abstractHigh quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well as Gan based devices with low cost substrates such as silicon.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/4642
dc.subjectCharacterizationen_US
dc.subjectCrystalline Structureen_US
dc.subjectNitrides,en_US
dc.subjectPhotodiodes.en_US
dc.titleA comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.en_US
dc.typeWorking Paperen_US
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