Synthesis And Characterization Of Zno Nanostructures Using Physical Vapor Deposition And Electrochemical Deposition For Optoelectronic Applications
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Date
2013-10
Authors
Hassan, Nadim Khalid
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Sains Malaysia
Abstract
ZnO nanostructures were grown by simple techniques to develop ZnO-based
semiconductor photodetectors (PDs) for UV detection. This work employed two
techniques, first, physical vapor deposition (PVD) and second, electrochemical
deposition (ECD) techniques. In the PVD process, condensed Zn vapor is reacted
with oxygen via vapor solid mechanism in three-zone tube furnace. The source
material for PVD was pure Zn powder evaporated under different reaction
conditions. Variations in the reaction time, substrates, and temperature in the furnace
were found to control the growth mechanism and morphology of the ZnO
nanostructures. For instance, high quality 1D ZnO nanostructures (Rods) were
achieved on SiO2 using ZnO thin film as a buffer layer. Also, it was possible to grow
tetrapods-like ZnO (TPs) and nanowires with different diameters and lengths as
confirmed via SEM imaging. Photoluminescence (PL) measurements at room
temperature showed a dominant peak related to a near-band-edge emission at
approximately 376 nm with an additional peak related to green-band emission at
approximately 520 nm.The highest near-band emission to green band emission ratio
of 1D ZnO nanostructures grown on Si(111) could result from the high crystallinity
of the fabricated nanostructure. Raman spectra measurements show four peaks, of
which E2 high was the dominant peak. The shift in this dominant peak from 437 cm-1
provided accurate information of the stress in the ZnO film lattice.
Description
Keywords
Zno Nanostructures , Optoelectronic Applications