Synthesis Of InN, GaN And IngaN Nanoparticles By A Chemical Method At Low Temperature For Solar Cell Applications
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Date
2016-09
Authors
Hassan Aq'eed, Motahher Abdallah
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Abstract
This study examined the synthesis of InN, GaN, InGaN nanoparticles (NPs) by a chemical method at low temperature in order to use in solar cell applications. To carry out this, the researcher has employed a number of relevant theoretical concepts and equations. The processes, which were performed, included the materials reaction in the rotary evaporator, stirrer magnetism, centrifugation, and spin coating process to deposit the nanoparticles for fabricating solar cells. Oleylamine (OAm) solution was used during the reaction and it played the role as a solvent. HNO3 and NH4OH were used as a Nitrogen source to synthesize InN, GaN, InGaN (NPs).The fabricated solar cell including two types of solar cells: the first type is hetero-junction solar cell (n-InN/P-Si) and (n-GaN/P-Si) which use Si p-(111) as a substrate, the second type is homo-junction solar cells (n-InGaN/p-InGaN) where Polyethylene terephthalate PET used as substrate. The synthesis of InN/GaN/InGaN (NPs) materials was measured and characterized by Field Emission Scanning Electron Microscopy FESEM, Energy Dispersive X-ray Spectroscopy EDX, Transmission Electron Microscopy TEM, X-ray Diffraction XRD, Photo-Luminescence PL, Raman Spectroscopy, UV- spectroscopy, where the fabricated solar cell characterized by using Keithely 2400 electrometer under simulated sun light at 30 mW/cm2..InN, GaN, and InGaN NPs were synthesized under different times and temperatures, and the best results were found at (12h) where the 90°C was the important key factor in this synthesis. The spin coating technique deposited the nanoparticles with average diameter of the
nanoparticle size phases are 45, 51 and 19.25 nm of InN, GaN and InGaN respectively. The energy gap of the synthesized InN nanoparticle is approximately 0.97 eV. Under illumination (30 mW/cm2) the n- nN/p-Si (111) hetro-junction solar cells displayed a short circuit current of 1.2 mA and power-conversion efficiency of 1.09%. While, the n-GaN NPs/Si(111) produced a heterojunction solar cell with fill factor of 0.56 and conversion efficiency of 2.06%. In this work, InGaN was doped with Magnesium (Mg) where the hole concentration, resistivity and mobility are studied. The Hall effect measurements showed that the hole concentration of InGaN NCs doped with Mg increase from 6.2 × 1016 to 2.3 × 1018 cm−3, while the hole mobility to decrease from 0.92 to 0.1 cm2 /(V.s) as the Mg doping ratio increases from 0.005 to 0.025 cm−3. The best InGaN homo junction solar cell made of nano-cubes film containing 0.4 Indium on flexible substrates showed a short-circuit current density of 1.247 mA/cm2 , an open-circuit voltage (Voc) of 0.48 V with 54% fill factor and 1.19 of converted efficiency(η). This work resulted in drawing a clear picture of the synthesis of InN, GaN, InGaN (NPs) characteristics and its ability to contribute in solar cell application.
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The synthesis of InN, GaN, InGaN nanoparticles (NPs) by a chemical method at low temperature , in order to use in solar cell applications.