Study of structural and optical properties of nanostructured wide band gap ternary alloy semiconductor.

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dc.contributor.authorHassan, Zainuriah
dc.date.accessioned2017-08-29T07:43:27Z
dc.date.available2017-08-29T07:43:27Z
dc.date.issued2015
dc.description.abstractSemiconductor technology has continuously progressed from the use of elemental semiconductors such as silicon and germanium to the use of binary, ternary and higher order alloys, particularly of II I-V and II-VI compounds. The interest in these semiconductor alloys stems from the desire to control the energy bandgap, and also to engineer the lattice parameter of the substrate to match that of the epitaxial layer.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/4451
dc.subjectnanostructureden_US
dc.subjectalloy semiconductoren_US
dc.titleStudy of structural and optical properties of nanostructured wide band gap ternary alloy semiconductor.en_US
dc.typeTechnical Reporten_US
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