Institut Penyelidikan dan Teknologi Nano Optoelektronik (INOR) - Tesis

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Growth Of Indium Gallium Nitride By Metalorganic Chemical Vapor Deposition And Simulation For Solar Cell Application
(2025-10)
Tan, Aik Kwan
Indium gallium nitride (ingan) is widely used for various optoelectronic applications due to its unique properties, such as a direct and tunable bandgap from 0.64 ev to 3.42 ev by varying the indium composition. However, the development of ingan-based devices encountered difficulty in growing indium-rich and highcrystalline quality ingan thin film as well as p-type ingan thin film. In this study, the key focus will be the metalorganic chemical vapor deposition (mocvd) growth of indium-rich (> 20%) ingan thin film with good crystalline quality (fwhm < 2000) and the optimization of annealing conditions for the magnesium (mg) doped ingan thin film for the p-type behaviour. By optimizing the growth temperatures and v/iii ratios, a 300 nm ingan thin film with a maximum indium composition of 21.18% was successfully grown and the best sample showed good crystalline quality with fullwidth- at-half-maximum (fwhm) of 1975 and 1746 for (0 0 0 2) and (1 0 -1 5) diffraction peaks, respectively at the v/iii ratio of 16562. Annealing temperature of 650°c to the mg-doped ingan thin films showed the lowest bulk resistivity and dislocation densities as compared with other annealing temperatures.
Sensing Characteristics Of Plasmonics Integrated In Various Configurations Of Plastic Optical Fiber Probe
(2025-08)
S Fendi, Farah Wardina
Leveraging the phenomenon of Surface Plasmon Resonance (SPR), researchers nowadays integrate its principle with powerful tools in the optical sensing industry, such as fiber optics (FO). Plastic optical fiber (POF) has become a favourable choice due to its flexibility, durability, and cost-effectiveness. Conventional SPR sensors suffer from complex configuration and low sensitivity, thus, this study modified a standard POF into U-bent D-shaped and integrated it with SPR sensor with the aim of optimizing the SPR sensor. The POF was coated with silver (Ag) as plasmonic material, then tested in refractive index (RI) and salinity level sensing for a certain liquid. To further the study, the fiber was then coated with tin diselenide (SnSe2) onto Ag layer to enhance the performance of the sensor in terms of sensitivity and stability due to its characteristic, which is large surface-to-volume ratio.
Roles Of Zno Nanorods As Arrays, Filler Material And Host Material For Enhancing Photodetector Applications Using Metal-Semiconductor-Metal And Heterojunction Configurations
(2025-05)
Rajamanickam, Suvindraj
Zinc oxide nanorods (zno nrs) have seen many uses in the field of optoelectronics and photodetector applications. Despite that, photodetectors have certain limitations such as too many layered structures, poor stability of organic materials, and defects within zno nrs itself that can be improved by using and modifying zno nrs. This thesis thus explores the role of zno nrs in different configurations for low-cost photodetector applications. The zno nrs were synthesized via hydrothermal growth and the three configurations studied were arrays, filler material, and host material. Zno nrs array configurations have been utilized in novel sandwiched photodetector structures using n-type silicon substrate (n-si), indium tin oxide (ito) glass, and polyaniline (pani). For the usage of zno nrs in filler configuration, zno nrs were mixed into poly (9,9-di-n-octylfluorenyl-2,7-diyl) or pfo polymer via simple scratching and mixing method to form pfo-zno nrs nanocomposite. The nanocomposite was then drop-casted onto si and zno/ito substrates to fabricate novel pfo-zno nrs photodiodes. To study zno nrs as host material configuration, silver (ag) was doped with three concentrations (1.7, 3.4, and 5.1 mol %) into zno nrs during hydrothermal growth, and ag microflakes were deposited onto the ag-doped zno nrs via photodeposition, to fabricate ag microflakes/ag-doped zno nrs metal-semiconductor-metal (msm) photodetectors. For sandwiched photodetector applications,
Investigation Of Radio Frequency Magnetron Sputtered Thulium Oxide Passivation Layer On Silicon And 4h-Silicon Carbide Substrates
(2025-08)
Deng, Junchen
Thulium oxide (Tm2O3) was deposited on silicon (Si) and 4H-silicon carbide (SiC) substrates using radio frequency (RF) magnetron sputtering technique, functioning as the high dielectric constant (k) passivation layers to address the performance limitations of power metal-oxide-semiconductor (MOS) devices, which arose from the low k silicon dioxide (SiO2) passivation layer and the narrow band gap of Si. The preliminary investigation of Tm2O3 as a passivation layer for Si-based MOS capacitors was conducted in a combined nitrogen-oxygen-nitrogen (NON) annealing ambient at temperature of 500, 600, 700, and 800oC. The results indicated that nitrogen ions were incorporated into the Tm2O3 passivation layer during the annealing process, creating a diffusion barrier layer at the interface.
Development Of Polymer/Al-Ag-Zno Nanocomposites For Uv-Shielding Applications
(2025-04)
Khalaf, Hameed Naser Khalaf
This thesis presented the development of polymer/ aluminum (al)-silver (ag)-zinc oxide (zno) nanocomposites (ncs) with single-metal (al, ag, or zno) or bimetallic (al+ag), (al+zno), and (ag+zno) configurations for ultraviolet (uv)-shielding applications. The casting technique was employed for the fabrication of flexible foil-shaped (al-ag-zno), (al+ag), (al+zno), and (ag+zno) nanoparticles (nps). The (al-ag-zno) nps added as filler at 0, 1, 5, 10, and 15 wt%, while (al+ag), (al+zno), and (ag+zno) with 5 wt% to polymer matrices such as polyvinyl alcohol (pva), polymethyl methacrylate (pmma), and polystyrene (ps). The morphology of al, ag, and zno nps, with a size range of 20 to 160 nm, was analyzed using the transmission electron microscopy (tem) technique. Energy dispersive x-ray (edx) examination showed the presence of al, ag, and zno nps in the samples at different concentrations, confirming their dispersion inside the polymer matrix. Uv-visible transmittance spectra showed low transmittance in the uv range, with a contrasting trend observed relative to nps concentrations. Uv-visible absorption spectra showed high absorption in the uv region, which was inversely related to the presence of (al+ag), (al+zno), and (ag+zno) ncs.

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