Institut Penyelidikan dan Teknologi Nano Optoelektronik (INOR) - Tesis
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- PublicationFabrication And Characterization Of Ingan Based Solar Cell: From Material To Device(2024-01)Yusof, Ahmad SauffiIndium gallium nitride (InGaN) material system has emerged as a promising candidate for high-efficiency solar cells due to its exceptional intrinsic properties. However, developing InGaN-based solar cells faces several challenges, including needing a p-doped layer and producing high-quality indium-rich InGaN alloy. This study explores innovative strategies to overcome these challenges, focusing on the practical development of thick InxGa1-xN-based Schottky solar cells, from material growth to device characterization.
- PublicationIndium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate(2024-01)Alias, Ezzah AzimahThis project attempts to improve the performance of InGaN LEDs grown on GaN substrates. To achieve this goal, three frameworks were proposed. Firstly, by introducing GaN cap layer in multiquantum wells (MQWs). Secondly, by roughening backside (N-face) of GaN substrate using new etching solution and annealing the substrate before roughening. Thirdly, by roughening GaN substrate prior to LED growth.
- PublicationGrowth Of Zno Nanorods Using Hydrothermal And Modified Chemical Bath Deposition For Device Applications(2017-03)M. Mohammad, SabahZinc oxide (zno) is applications in high efficiency electronic and optoelectronic devices. The present study follows two objectives. First, synthesis of vertical and inclined well-aligned zno nanorods (nrs) on a nylon substrate via the hydrothermal method, and subsequently fabricate the highly flexible low-cost ultraviolet photodiodes (uv-pds) and hydrogen (h2) gas sensor devices. Pre-heat treatment of zno seeds/substrate at 180°c with varying duration (0.5-6 h) shows important changes. Morphological observations revealed the formation of aligned hexagonal-like shaped nanorods when the diameter, length (aspect ratio), surface area and density increase with increasing heat treatment time. The x-ray diffraction analysis confirms the formation of wurtzite zno phase with a preferred orientation along (002) direction and enhanced crystallinity. Photoluminescence spectra exhibited a strong and sharp ultraviolet (uv) near band edge emission peak that was higher than that of the broad peak. Temperature and duration to produce uniform zno seeds was 180°c for 3 h.
- PublicationPenerapan Gerak Isyarat Mekanisma Pengaratan Besi Dalam Subjek Kimia Dalam Kalangan Murid Tingkatan Empat(2024-04)Hassim, SuziyanaKajian ini bertujuan meneroka penerapan gerak isyarat (GI) mekanisma pengaratan besi dalam kalangan murid Kimia Tingkatan Empat. Dapatan penerokaan GI satu modul GeIsP dibina dan dinilai keperluan modul GeIsP dalam pembelajaran. Pembinaan modul ini menggunakan pendekatan model ADDIE dan telah melalui proses pengesahan. Rekabentuk kajian ini adalah berbentuk pendekatan kualitatif deskriptif. Kajian ini terdapat Dua Fasa. Fasa Satu melibatkan penerokaan GI mengikut pengelasan Mc Neill dalam kalangan 12 orang murid berbeza kelompok. Manakala Fasa Dua mempunyai dua peringkat. Dapatan hasil daripada Fasa Satu , satu modul dibangunkan pada peringkat satu dan peringkat dua melibatkan penilaian persepsi 4 orang guru pakar kimia dan 30 orang guru kimia. Sampel kajian melibatkan sampel bertujuan. Data telah diperoleh melalui senarai semak, pemerhatian, rakaman video, temu bual, dan analisis dokumen. Kesahan kandungan modul dan kebolehpercayaan instrumen juga telah dibuat menggunakan kebolehpercayaan antara penilai/pakar melalui Analisis Indeks Cohen Kappa. Kesahan mencapai purata keseluruhan sebanyak >0.7 Nilai Cohen Kappa. Dapatan kajian menunjukkan terdapat perbezaan dan persamaan penggunaan GI, perbezaan jenis kekerapan GI, perbezaan sela masa pertuturan dan pengekalan kefahaman selepas tiga bulan dalam kelompok murid sederhana dan lemah. Dapatan kajian turut menunjukkan maklum balas positif terhadap pendekatan modul GeIsP yang dibangunkan.
- PublicationGreen Synthesized Ceo2 Nanostructures On Ceo2 And Eu Doped Ceo2 As Passivation Layer For Silicon Based Metal-Oxide-Semiconductor Devices(2024-04)Nsar, Saad Milad AliThis research presented a green synthesis of cerium oxide (CeO2) nanostructures using P. amaryllifolius leaves extract deposited on CeO2 and Europium (Eu3+) doped CeO2 as passivation layer for silicon-based metal-oxide-semiconductor devices. The effects of adding monoethanolamine (MEA) and CeO2 seed layers for the growth of CeO2 nanostructures were investigated. Findings revealed that CeO2 seed layers played an important role in yielding a lower leakage current density (J) (~ 2.5 x 10-6 A cm-2 at gate voltage (Vg) = 2V) when compared with MEA addition due to the improvement of oxygen-rich condition in the CeO2 samples by the seed layers. The effects of post-deposition annealing temperature (600, 700, 800, 900˚C) and ambient (nitrogen-oxygen-nitrogen, forming gas-oxygen-forming, and argon-oxygen-argon) onto structural, morphological, optical, and electrical characteristics of CeO2 and Eu3+-doped CeO2 seed layers were studied. Optimisation of the findings showed that a better J-Vg characteristic was achieved at 800˚C regardless of ambient while the use of nitrogen-oxygen-nitrogen outperformed other ambient because of the passivation of nitrogen to reduce the formation of low dielectric constant (k) silicon dioxide at the CeO2/Si interface. The growth of CeO2 nanostructures on 1 layer of CeO2 seed layer surpassing other samples having 3, 5, and 7 layers has attained good results in terms of a high k value (16.19), a large direct bandgap (3.98 eV), a low J of 5.07 x 10-11 A cm-2 at Vg = 5V as well as large breakdown voltage (12.82 V).