Publication: Simulation study of silicon carbide mosfet based inverter for smart power switch
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Date
2024-08
Authors
Anis Sofea binti Mohd Noor
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Abstract
This research investigates the comparative analysis between Silicon Carbide (SiC) and Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based inverters with addressing the switching losses, conduction losses and power losses. Si is the conventional semiconductor material that has long been favoured but faces limitations in power losses where it impacting the performance in term of efficiency and reliability. Moreover, Si MOSFET encounter challenges such as slow switching speeds and inherent conduction losses which resulting in the abundance of power losses. In contrast, the SiC presents itself as a promising alternative due to its superior physical properties. SiC offers a significantly higher breakdown electric field strength which enabling the fabrication of higher voltage semiconductor devices particularly SiC MOSFET. Additionally, SiC exhibits more faster switching speeds and lower on-resistance compared to Si which leading to reduced switching losses, conduction losses and power loss respectively. The intrinsic properties in the SiC particularly making it well-suited for a high frequency and Si based inverter is employed within the simscape and simulink in MATLAB Software to conduct a thorough comparative analysis of SiC and Si for its switching losses, conduction losses and power losses. By comparing the performance of SiC and Si MOSFET based inverter, it will provide a valuable insight into the advantages of SiC over Si in power electronics applications. The findings of this research contribute to a deeper understanding of the MOSFET materials in the inverter environment. Furthermore, the study highlights the potential of SiC as a technology that can drive advancements in various industries, including automotive, renewable energy and power distribution.