Publication: Design of receiver lowpass filter for uwb application using 0.18μm cmos technology
| datacite.subject.fos | oecd::Engineering and technology::Electrical engineering, Electronic engineering, Information engineering | |
| dc.contributor.author | Khor, Boon Tiang | |
| dc.date.accessioned | 2024-05-30T08:19:40Z | |
| dc.date.available | 2024-05-30T08:19:40Z | |
| dc.date.issued | 2006-06-01 | |
| dc.description.abstract | The design and analysis of a baseband lowpass filter for UWB application in front end receiver is presented in this report. The objective of this project is to design a lowpass filter which operates with voltage 1.80V and has a bandwidth 264.00MHz by using Silterra 0.18um SMCMOS technology. Transconductor-capacitor filter is the filter architecture being chosen to design and analysis the lowpass filter due to its capability to operate in high frequency, but low power and low cost as compared to passive filter. First to fourth order Gm-C Butterworth lowpass filter is designed and their performance is compared to allow effective filter order selection. First order Gm-C Butterworth lowpass filter has bandwidth 264.00MHz and DC gain of -0.25dB. The 1dB compression point of first order filter is 3.68dBm and third order intercepts point (IP3) at 11.69dBm. The power consumption of first order filter is 5.00mW. Second order filter has bandwidth of 264.00Mhz, DC gain of -0.13dB, 1dB compression point at -0.64dBm, IP3 at 6.05dBm and power consumption of 10.01mW. The third order Gm-C filter has bandwidth 264.00MHz, DC gain of -0.38dB, 1dB compression point at -0.077dBm IP3 at 6.61dBm, power consumption of 15.02mW. The forth order Gm-C filter has bandwidth 264.00MHz, DC gain of -0.26dB, 1dB compression point at -1.92dBm IP3 at 4.50dBm, power consumption of 20.02mW. Third order Gm-C Butterworth lowpass filter has been chosen as baseband filter due to its sharper rolloff in transition from passband to stopband than first and second order filter, and has a better linearity than fourth order filter. The third order filter consists of 72 transistors and 3 MIM capacitor. The size of layout of third order Gm-C filter is 294 286 μm× μm . The designed filter will be sent to Silterra for fabrication into chip and furthermore chip characterization and measurement will be carried out to make sure the measurement of real filter chip can match well as closed as to the simulated result of filter design. | |
| dc.identifier.uri | https://erepo.usm.my/handle/123456789/19381 | |
| dc.language.iso | en | |
| dc.title | Design of receiver lowpass filter for uwb application using 0.18μm cmos technology | |
| dc.type | Resource Types::text::report | |
| dspace.entity.type | Publication | |
| oairecerif.author.affiliation | Universiti Sains Malaysia |