Publication:
Evaluation of fixed charges on high resistivity silicon utilizing metal insulator-semiconductor (MIS) structures

Loading...
Thumbnail Image
Date
2023-07
Authors
Kee, Jiunn Liang
Journal Title
Journal ISSN
Volume Title
Publisher
Research Projects
Organizational Units
Journal Issue
Abstract
The Metal-Insulator-Semiconductor (MIS) structures consist of metal layer, insulating layer and semiconductor layer. The MIS structures able to operate in accumulation, depletion and inversion condition based on the different bias voltage applied on the metal gate respectively. Therefore, MIS structures had been used widely in many industries due to its characteristics. As a result, many research had been studied and researched the MIS structures. However, there are no study about the effect for fixed charges in aluminium nitride (AlN) as insulating layer on high resistivity silicon where it can be used to alter other parameter such as thickness of AlN and metal work functions effect. Therefore, the simulation of the MIS structures had been carried out. In this project, the structural modelling parameter and the simulation process is carried out by using Silvaco ATLAS TCAD tool. The first objective of this mini project is to evaluate capacitance-voltage characteristics of MIS structure utilizing AlN and high resistivity silicon as insulator and semiconductor respectively while the second objective is to investigate the effects of fixed charges on the photoelectric properties of the said structure. The simulation of C-V curve of MIS structure with AlN as insulating layer without and with fixed oxide charge density had been carried out to fulfil the first objective. The second objective can be achieved by performing simulation of I-V curve in dark and under illumination on the MIS structure. The MIS structure with AlN and SiO2 as insulating layer respectively had also been compared by using I-V curve in dark and under illumination. Both structures with different insulating layer are also compared by using I V curve without and with fixed oxide charge density respectively. The C-V curve and I V curve both have shown good result with some variation. However, it still obey the theory and previous study. Hence, both objectives were achieved by doing this project. The implication of this project is that it can contribute useful result to the semiconductor field.
Description
Keywords
Citation