Publication: Investigating the effect of centrifugal spray etching operational parameters on defect density and electrical performance of titanium disilicide layers in postsilicide etching using a statistical approach
| dc.contributor.author | Yuvneesh Vasudevan | |
| dc.date.accessioned | 2025-11-26T01:55:50Z | |
| dc.date.available | 2025-11-26T01:55:50Z | |
| dc.date.issued | 2025-09-01 | |
| dc.description.abstract | Titanium disilicide (TiSi₂) is a critical material for forming electrical contacts on the source/drain regions and gate of metal–oxide–semiconductor (MOS) devices, owing to its low electrical resistivity and excellent thermal stability. In the self-aligned silicide (SALICIDE) process, post-etching is required to remove unreacted titanium (Ti) and titanium nitride (TiN) while preserving the underlying TiSi₂ layer. Centrifugal spin spray etching has emerged as an effective technique for this purpose, offering a balance between chemical precision and high- throughput processing. However, process variability driven by parameters such as atomisation pressure, rotational speed, and wafer slot position can significantly affect etch performance. This research aims to optimise the centrifugal spin spray technique for post TiSi₂ etching by systematically investigating the influence of atomisation pressure, rotational speed, and wafer slot position using Design of Experiments (DOE) and Response Surface Methodology (RSM). Wafer-level characterisation included measurements of defect density, electrical resistance, and resistance uniformity and TiSi2 thickness measurement. Results show that atomisation pressure (N₂) and rotational speed are the dominant parameters controlling etch performance in Centrifugal spin spray etching. Higher N₂ pressure and rotational speed improved mass transport and droplet distribution, reducing defect density and enhancing resistance uniformity. Wafer slot position had minor individual effects but showed critical interactions with rotational speed, particularly affecting resistance uniformity. Multi objective optimisation identified a robust process window (20 kPa N₂ pressure, 50 rpm, Slot 1) that achieved a target total resistance of 9.5 Ω, minimised variation (CV = 3.93%), and reduced defect count to 113. This work provides a quantitative understanding of the relationship between process parameters, TiSi₂ thickness, and electrical resistance, offering practical guidance for improving uniformity and yield, in advanced semiconductor manufacturing. | |
| dc.identifier.uri | https://erepo.usm.my/handle/123456789/23158 | |
| dc.language.iso | en | |
| dc.title | Investigating the effect of centrifugal spray etching operational parameters on defect density and electrical performance of titanium disilicide layers in postsilicide etching using a statistical approach | |
| dc.type | Resource Types::text::thesis::master thesis | |
| dspace.entity.type | Publication | |
| oairecerif.author.affiliation | Universiti Sains Malaysia |