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Fabrication And Characterization Of Ingan Based Solar Cell: From Material To Device

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dc.contributor.authorYusof, Ahmad Sauffi
dc.date.accessioned2025-10-16T07:59:13Z
dc.date.available2025-10-16T07:59:13Z
dc.date.issued2024-01
dc.description.abstractIndium gallium nitride (InGaN) material system has emerged as a promising candidate for high-efficiency solar cells due to its exceptional intrinsic properties. However, developing InGaN-based solar cells faces several challenges, including needing a p-doped layer and producing high-quality indium-rich InGaN alloy. This study explores innovative strategies to overcome these challenges, focusing on the practical development of thick InxGa1-xN-based Schottky solar cells, from material growth to device characterization.
dc.identifier.urihttps://erepo.usm.my/handle/123456789/22841
dc.language.isoen
dc.subjectSolar cells
dc.titleFabrication And Characterization Of Ingan Based Solar Cell: From Material To Device
dc.typeResource Types::text::thesis::doctoral thesis
dspace.entity.typePublication
oairecerif.author.affiliationUniversiti Sains Malaysia
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