Publication: Characterization of silicon on insulator (SOI) devices by using capacitance-voltage (C-V) and current-voltage (i-v) method
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Date
2023-08
Authors
Aufa Nadia binti Suhanda
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Abstract
Silicon on Insulator (SOI) technology is of great interest in the semiconductor field due to its unique electrical and physical properties, offering improved device performance, lower power consumption, and enhanced radiation resistance compared to conventional bulk silicon devices. This project focuses on characterizing two SOI devices: Metal Oxide Semiconductor Capacitor (MOSCAP) and Metal Oxide Semiconductor Field effect Transistor (MOSFET). Capacitance-Voltage (C-V) characteristics were analyzed using High-Frequency Capacitance-Voltage (HFCV) and Quasi-Static Capacitance Voltage (QSCV) methods on the MOSCAP, while I-V characteristics, including output and transfer characteristics, were measured on the MOSFET. A comparison of C-V and I-V data assessed device performance. Notably, the N-type MOSCAP showed distinct behaviors between 20 nm and 60 nm Si3N4 thicknesses, impacting voltage flat band (Vfb) and charge accumulation. Hydrogen gas significantly influenced MOSCAP behavior, shifting Vfb leftward. Furthermore, the N-type MOSFET with a 60 nm Si3N4 layer demonstrated higher drain current (Id) and transconductance (gm) due to improved charge storage capabilities. The study provides valuable insights into SOI device electrical characteristics, emphasizing the effects of Si3N4 thickness and hydrogen gas on performance. These findings contribute to advancing and optimizing SOI technology for various semiconductor applications.