Publication: Monolithic microwave integrated circuit (mmic) power amplifier
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Date
2009-04-01
Authors
Ang, Chin Guek
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Abstract
The aim of this project was to design a MMIC power amplifier for wireless application by using 0.15 μm GaAs Power Pseudomorphic High Electron Mobility Transistor (PHEMT) technology with a gate width of 100 μm and 10 fingers at certain low frequency points at 2.4 GHz and 3.5 GHz. This project will focus on the power amplifier performances and layout design. The design methodology for power amplifier design can be broken down into three main sections: architecture design, small-signal design, and large-signal optimization. For 2.4 GHz power amplifier, with 3.0 V drain voltage, the amplifier has achieved 17.265 dB small-signal gain, input and output return loss of 16.310 dB and 14.418 dB, 14.862 dBm 1-dB gain compression power with 12.318 % power-added efficiency (PAE). For 3.5GHz power amplifier, the amplifier has achieved 14.434 dB small-signal gain, input and output return loss of 12.612 dB and 11.746 dB, 14.665 dBm 1-dB gain compression power with 11.796 % power-added efficiency (PAE). The power amplifier for frequency point at 2.4 GHz applies for Wireless LAN applications such as WiFi and WPAN whereas power amplifier for frequency point at 3.5 GHz applies for WiMax base station and W-CDMA. For the power amplifier MMIC, the requirements of power amplifier including aspects of high efficiency, high gain, unconditional stable and operation at 2.4 GHz and 3.5 GHz are produced.