Publication: Design of a CMOS tunable planar transformer in 180nm technology for radio frequency application
Loading...
Date
2024-08
Authors
Nur Arina Amani binti Hashim
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
This research aims to improve planar inductors, which frequently impede optimal tuning performance, to meet the need for wideband and cost-effective performance in CMOS technologies. A unique method for adding tunability to radio frequency circuits is suggested. It involves using a tunable planar transformer that may change inductance by employing a switching mechanism. Achieving high inductance and quality factor—both essential for RF frequencies—the design aims to tune the frequency between 3 and 6 GHz, which is perfect for RF applications. The parts are designed and simulated using Cadence Virtuoso and the Sonnet EM tool. The successful design and simulation of the adjustable planar transformer, demonstrating its enhancement of tuning performance in CMOS-based RF systems, is a notable achievement. These findings are important for expanding new applications for wireless technology. The schematic and layout results for both the primary and secondary windings exhibit significant similarity when the tuning voltage is 0V. The tunable transformer can tune from 3 to
6 GHz with an inductance value ranging from 2.2091 nH to 3.1183 nH for the primary winding, and a high-quality factor from 7.9322 to 3.2343 at 0V. For the secondary winding, the inductance value ranges from 2.1696 nH to 2.8736 nH, and the quality factor ranges from 3.0925 to 2.0166. When the tuning voltage is 1.8V, the results differ from the ideal due to the effect of parasitic capacitance between the windings.