Publication: Design of class e power amplifier
| datacite.subject.fos | oecd::Engineering and technology::Electrical engineering, Electronic engineering, Information engineering | |
| dc.contributor.author | Yeong, Chee Yan | |
| dc.date.accessioned | 2024-07-04T02:17:18Z | |
| dc.date.available | 2024-07-04T02:17:18Z | |
| dc.date.issued | 2010-04-01 | |
| dc.description.abstract | This project is about the study and design of RF power amplifier circuit. The rapid growth of wireless communications requires more advanced and high performance of the power amplifier circuit. Power amplifier play a important role to convert dc-input power into significant amount of RF/ microwave output power so that the RF signal have enough power transmit trough an antenna. However, the power amplifier itself is the most power consuming part and also the main cause of signal distortion in a transceiver circuit. The class E amplifier, introduced by Sokal, has superior drain efficiency and low stress on the transistor in which no simultaneous high voltage and high current in the transistor; that minimizes power dissipation. Notice that transistor is the major power losses contributor in power amplifier circuit. In this project, class E power amplifier with 2.4 GHz operating frequency, 72.68 % drain efficiency, 14.8642 mW of output power with 3 different circuit configurations by using 0.13 μm were being simulated. The accuracy of the simulation results were verified by the literature. By comparing the 3 configurations, class E power amplifier with common source and source follower as the pre-amplifier stage has the highest power gain value among the 3 configuration. | |
| dc.identifier.uri | https://erepo.usm.my/handle/123456789/19601 | |
| dc.language.iso | en | |
| dc.title | Design of class e power amplifier | |
| dc.type | Resource Types::text::report | |
| dspace.entity.type | Publication | |
| oairecerif.author.affiliation | Universiti Sains Malaysia |