Publication: Investigation of the resistive switching properties and mechanisms of polymannose based memory devices
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Date
2023-05-01
Authors
Ilias Ait Tayeb
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Abstract
Resistive random access memory technologies (ReRAM) are promising candidates for next-generation non-volatile memories owing to their simple device structure, low operational cost and power consumption and their compatibility with CMOS technologies. In addition, bio-organic materials are considered as prominent alternatives due to their biodegradability and benign environmental impacts. As such, the motivation behind this research is to determine the applicability of polymannose as a suitable bio-organic material for ReRAM applications utilizing a two-terminal structure. Polymannose thin-films were produced via drop casting a D-mannose powder and aqueous ethanol solution on ITO/PET substrate and dried at 160oC for different duration followed by Ag deposition as top electrode. Current–voltage (I–V) characterization was carried out and displays that resistive switching characteristics are achieved in the device when the precursor is dried between 4 - 7 h. The optimal drying time of 7 h provided optimal resistive switching characteristics, with a READ window of 2.2 V, high ON/OFF ratio of >105 at relatively low READ voltage of 0.01 V, acceptable endurance cycles of approximately 102, and a long retention time of >104 s. Further I-V analysis and HRTEM-EDS characterization reveal that high-resistance states (HRS) are governed by space charge limit current conduction resulting, while the low resistance states (LRS) are dominated by Ag metallic filaments. Furthermore, by modulating the compliance current, the polymannose successfully demonstrated twelve distinct and reliable LRS states at a READ voltage as low as -0.05 V. Moreover, the effect of fullerene (C60) on enhancing the performance of polymannose based ReRAMs has been studied. A memory device with Au-Pd/polymannose:C60/ITO/PET structure containing 5 vol% C60 has shown optimal ON/OFF ratio reaching ~105, a smaller read-memory window of 6.5 V and stable retention characteristics reaching 104 s. The electrical characteristics of the Au-Pd/polymannose:C60/ITO/PET shows a governing electronic conduction mechanism, and a model is proposed to explain the resistive switching mechanism for both device types. These results not only demonstrate the suitability of polymannose as a candidate bio-organic material for environmentally friendly high-density next generation non-volatile memories, but also show competitive performances that can potentially rival current materials used in ReRAM applications.