Publication: Improvement Of Structural Design Of Algan/Gan Based Hemt For High Performance Power Devices
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Date
2025-02
Authors
Mihat, Muhaimin Haziq
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Abstract
This research focuses on the introduction of innovative structural designs aimed at addressing the multifaceted challenges associated with algan/gan hemts. Simulations are first validated against experimental data to ensure reliability. The investigated structures are then categorized into two; below and above the gate region. To address the high electric field concentrations near the metal contact edges, this thesis proposes new structural variations below the gate, which includes triple-trench, dual-notch, and an algan-graded channel with varied al composition along the channel. These approaches optimize the electric field distribution and reduce the likelihood of current collapse through enhanced mobility. Another focus is gate reliability, particularly gate leakage and on-state resistance through designs above the gate, such as a gate airgap, created by physically separating the metal contact from the semiconductor. Further optimizations include p-gan layer thickness, p-gan doping concentration, and device dimensions, balancing performance and reliability. This includes a comprehensive analysis of the trade-offs in gate length, gate-drain spacing, and surface passivation materials to reduce gate leakage, and a recessed p-gan gate is also developed for safer on-state operation. Overall, a 478% improvement in breakdown properties and a 403% increase in maximum drain current have been realized with the graded channel.
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Gallium nitride