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Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate

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dc.contributor.authorAlias, Ezzah Azimah
dc.date.accessioned2025-10-14T03:24:26Z
dc.date.available2025-10-14T03:24:26Z
dc.date.issued2024-01
dc.description.abstractThis project attempts to improve the performance of InGaN LEDs grown on GaN substrates. To achieve this goal, three frameworks were proposed. Firstly, by introducing GaN cap layer in multiquantum wells (MQWs). Secondly, by roughening backside (N-face) of GaN substrate using new etching solution and annealing the substrate before roughening. Thirdly, by roughening GaN substrate prior to LED growth.
dc.identifier.urihttps://erepo.usm.my/handle/123456789/22768
dc.language.isoen
dc.subjectGallium nitride
dc.subjectLight emitting diodes
dc.titleIndium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate
dc.typeResource Types::text::thesis::doctoral thesis
dspace.entity.typePublication
oairecerif.author.affiliationUniversiti Sains Malaysia
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Institut Penyelidikan dan Teknologi Nano Optoelektronik (INOR) - Tesis