Publication: Simulation and modeling of ganalgan moshemt for modern power device application using TCAD athena
| datacite.subject.fos | oecd::Engineering and technology::Electrical engineering, Electronic engineering, Information engineering::Electrical and electronic engineering | |
| dc.contributor.author | David Palliah al Vathakan | |
| dc.date.accessioned | 2025-05-20T08:57:28Z | |
| dc.date.available | 2025-05-20T08:57:28Z | |
| dc.date.issued | 2024-07 | |
| dc.description.abstract | This research project aims to simulate and analyze Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) Metal-Oxide-Semiconductor High-Electron Mobility Transistors (MOSHEMTs) using TCAD Athena, a leading TCAD software, to gain insights into their performance characteristics and behavior for power electronics applications. The scope includes defining material properties, establishing doping profiles, designing device structures, performing simulations, and analyzing results through techniques like current-voltage (𝐼𝑑 vs. 𝑉𝑑 and 𝐼𝑑 vs. 𝑉𝑔) analysis, and threshold voltage. Optimization strategies will be explored to enhance device parameters, contributing to the advancement of semiconductor technology and the development of efficient electronic systems. Additionally, the study will compare the simulated fabrication's 𝐼𝑑 vs. 𝑉𝑑 and 𝐼𝑑 vs. 𝑉𝑔 curves with physically fabricated devices to validate the accuracy and reliability of the simulation results, providing a comprehensive understanding of the simulation-to-fabrication correlation in GaN/AlGaN MOSHEMT devices. | |
| dc.identifier.uri | https://erepo.usm.my/handle/123456789/21761 | |
| dc.language.iso | en | |
| dc.title | Simulation and modeling of ganalgan moshemt for modern power device application using TCAD athena | |
| dc.type | Resource Types::text::report::technical report | |
| dspace.entity.type | Publication | |
| oairecerif.author.affiliation | Universiti Sains Malaysia |