Publication:
A study on low temperature synthesis of silicon carbide thermionic cathode and its electron emission analysis for thermionic energy converter

dc.contributor.authorLeong, Thye Jien
dc.date.accessioned2024-01-23T07:21:32Z
dc.date.available2024-01-23T07:21:32Z
dc.date.issued2020-07-01
dc.description.abstractEnergy conversion of renewable and clean energy such as thermal energy is often related to solar cell and photovoltaic cell. These are the rising technology devices that generate electrical energy for the use in industrial and residential sectors. In order to seek for an alternative approach in meeting the growing energy demand and reducing the dependency on conventional energy resources such as biomass energy, another direct thermal energy to electricity conversion device namely Thermionic Energy Converter (TEC) is being studied. However, the technology involved in this device has one major limitation which is the unavailability of low cost cathode materials with low work function yet easily-obtained. This drawback has motivated the study of cathode material in term of lowering the work function by surface nanostructuring the thermionic cathode for TEC in the mentioned research direction. By using atmospheric pressure chemical vapor deposition (APCVD) method, a low temperature (600°C) synthesis thermionic cathode was developed, as validated by the literature (Xi et al., 2006). In this approach, silicon carbide (SiC) nanostructures were synthesized on the silicon substrate. This method was optimized based on two parameters which are controlling the thickness of catalyst (Magnesium) and the amount of precursors (silicon tetrachloride and 2-ethoxyethanol) used in the experiments. Some material characterization techniques, such as SEM, EDX, and FESEM were performed to the thermionic cathode to support the proposed synthesis method. Besides, a new in-house built TEC system that is equipped with a vacuum chamber, CO2 laser heating system, turbomolecular pump, and digital nanoammeter was developed, which can manipulate temperature of the thermionic cathode. The electron emission analysis of thermionic cathode was performed at different temperature ranges where a copper plate (4.7eV) was used as the anode. Based on the results, a total reduction of ~0.36 eV to the work function of the p-type silicon (111) with ~4.84 eV is achieved by the as-synthesized SiC nanowires thermionic cathode using M200SC3 - ~4.48 eV sample. Lastly, the Schottky effect is proven showing an enhancement to the current density of the SiC nanowires thermionic cathode by compromising a small deviation of the work function of ~0.02 eV. These findings prove that the presence of SiC nanostructures on the thermionic cathode has achieved higher current density, 87 nA cm-2 with the presence of applied voltage at 4000 V/cm and 71.8 nA cm-2 at zero field effect, as compared to 14.4 nA cm-2 for the control sample in this TEC study.
dc.identifier.urihttps://erepo.usm.my/handle/123456789/18191
dc.language.isoen
dc.titleA study on low temperature synthesis of silicon carbide thermionic cathode and its electron emission analysis for thermionic energy converter
dc.typeResource Types::text::thesis
dspace.entity.typePublication
oairecerif.author.affiliationUniversiti Sains Malaysia
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