Publication: Micro and millimeter wave integrated circuit (mmwic) amplifier
Loading...
Date
2009-04-01
Authors
Ng, Xiang Rhung
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
The aim of this project was to design low noise (LNA) and medium power amplifier (MPA) at 30GHz based on 0.15um GaAs Power Pseudomorphic High Electron Mobility Transistor pHEMT technology. The simulation was performed using ADS. The LNA and MPA in this project are using the same methodology that is define the device characteristic, biasing network, stability network, input and output matching network, cascading the single stage circuit and design layout.
At a supply voltage of 3.0V and 30 GHz operating frequency, this two-stage LNA achieves an associated gain of 21.628 dB, noise figure (NF) of 2.509 dB and output referred 1dB compression point (P1dB) of -11.003dBm, the total power consumptions for the LNA is 174mW.
At a supply voltage of 6.0V and 30 GHz operating frequency, a 2-stage MPA achieves a linear gain (S21) of 13.236 dB, P1dB of 22.455dBm, power gain of 11.055 dB and the PAE of 14.606% and the total power consumptions for the MPA is 1.122W. The 30GHz LNA and PA can be applied in direct broadcast satellite (DBS), automotive radar transmitter and receiver respectively.