Publication: Growth Of Indium Gallium Nitride By Metalorganic Chemical Vapor Deposition And Simulation For Solar Cell Application
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Date
2025-10
Authors
Tan, Aik Kwan
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Abstract
Indium gallium nitride (ingan) is widely used for various optoelectronic applications due to its unique properties, such as a direct and tunable bandgap from 0.64 ev to 3.42 ev by varying the indium composition. However, the development of ingan-based devices encountered difficulty in growing indium-rich and highcrystalline quality ingan thin film as well as p-type ingan thin film. In this study, the key focus will be the metalorganic chemical vapor deposition (mocvd) growth of indium-rich (> 20%) ingan thin film with good crystalline quality (fwhm < 2000) and the optimization of annealing conditions for the magnesium (mg) doped ingan thin film for the p-type behaviour. By optimizing the growth temperatures and v/iii ratios, a 300 nm ingan thin film with a maximum indium composition of 21.18% was successfully grown and the best sample showed good crystalline quality with fullwidth- at-half-maximum (fwhm) of 1975 and 1746 for (0 0 0 2) and (1 0 -1 5) diffraction peaks, respectively at the v/iii ratio of 16562. Annealing temperature of 650°c to the mg-doped ingan thin films showed the lowest bulk resistivity and dislocation densities as compared with other annealing temperatures.
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Solar Cells Solar Cells--Congresses Solar Cells--Effect Of Radiation On