Publication: Evaluation of metal work functions effect on the photoelectric properties of metal-insulator semiconductor (mis) structures on high resistivity silicon with aluminium nitride tunnelling insulator
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Date
2023-08
Authors
Goh, Kang How
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Abstract
One example of a semiconductor electronic device that makes use of thin tunnelling dielectric layers in metal-insulator-semiconductor (MIS) designs is the
photodetector. There is no past study that has investigated changing the metal contacts used to design the MIS structure for photodetectors, which will affect the photoelectric properties of MIS structures on high resistivity silicon with an aluminium nitride tunnelling insulator. Therefore, the comparisons of the current-voltage (I-V) characteristics in terms of the dark current and photocurrent and the K ratios is made with the effect of varying the metal work functions of the metal contacts that are utilized on MIS structures. With the aid of ATLAS statements from the Silvaco TCAD software, the working operation for each MIS structure was verified by the illustration of band diagrams in TonyPlot. Furthermore, comparisons between simulated photocurrent and simulated dark current were made for each MIS structure at a bias voltage range of -1.6 V to 0.8 V. The results showed that the simulated photocurrent magnitudes were higher than the simulated dark current magnitudes. When comparing the metal contacts, Pd metal has the highest simulated dark current and photocurrent, while Al metal has the lowest simulated dark current and photocurrent. Finally, the K ratio of Pd metal was the highest, whereas that of Al metal was the lowest. Therefore, the Pd/AlN/p-Si/Pd MIS structure was a good candidate for an effective photodetector in optoelectronic applications.