Publication: Modeling and simulation thin film titania for memory resistor (memristor)
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Date
2012-06-01
Authors
Foo, Meng Kok
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Abstract
Generally, resistor, capacitor and inductor are the existing fundamental circuit elements. Until 1971, Leon Chua, father of nonlinear circuit theory and cellular neural networks, has postulated memristor as the fourth fundamental circuit element. The unique ability of memristor is that memristor can remember its resistance value even though power is turned off. Armed with this characteristic, memristor can be developed to become a new generation of non-volatile memory. To overcome the memory loss problem of computer when power is turned off before saving the work, the characteristics of memristor have to be further analyzed as memristor can be implemented practically in memory industry in future. The purpose of this project is to study and interpret the properties of memristor and the fundamental mathematical analysis of memristor. By definition, a memristor relates the charge and the magnetic flux in a circuit, and complements a resistor , a capacitor , and an inductor as an ingredient of ideal electrical circuits. This project mainly focuses on the mathematical analysis and simulation of memristor model. A linear drift memristor model is used to perform mathematical analysis. After derivation of memristor is done analytically, the mathematical derivations are implemented into simulation using MATLAB. The
Charge-Flux ( - ) curve, Current-Voltage ( - ) characteristics and frequency variation effects in - characteristics of memristor are simulated and analyzed. Upon this stage, the characteristics of memristor simulated from MATLAB can be compared with the theoretical characteristics of memristor. The - curve of memristor is a monotonically increasing curve. While a pinched hysteresis loop is illustrated by the - characteristics of memristor. The lower the frequency of applied input voltage the greater the hysteretic effect is shown in characteristics of memristor. On the other hand, when the frequency of the applied input voltage is high graph of memristor shows a linear straight line instead of a hysteresis loop. The performance of memristor can be improved by increasing the length of doped region graph of memristor illustrates a hysteresis loop at high frequency when the length of doped region increases.
This project has been carried out successfully as the objectives of this project have been
achieved